Magnetoresistance and charge transport in graphene governed by nitrogen dopants

Autoren

Markus Rein
Nils Richter
Khaled Parvez
Xinliang Feng
Hermann Sachdev
Mathias Klaeui
Klaus Muellen

Autoren-URL

https://www.webofscience.com/api/gateway?GWVersion=2&SrcApp=fis-test-1&SrcAuth=WosAPI&KeyUT=WOS:000349940500033&DestLinkType=FullRecord&DestApp=WOS_CPL

DOI

10.1021/nn5057063

eISSN

1936-086X

Externe Identifier

Clarivate Analytics Document Solution ID: CB9GR
PubMed Identifier: 25548883

ISSN

1936-0851

Ausgabe der Veröffentlichung

2

Zeitschrift

ACS NANO

Schlüsselwörter

CVD graphene
nitrogen doping
negative magnetoresistance
weak localization

Paginierung

1360 - 1366

Datum der Veröffentlichung

2015

Status

Published

Titel

Magnetoresistance and Charge Transport in Graphene Governed by Nitrogen Dopants

Sub types

Article

Ausgabe der Zeitschrift

9

Data source: Web of Science (Lite)

Autoren

Markus Rein
Nils Richter
Khaled Parvez
Xinliang Feng
Hermann Sachdev
Mathias Kläui
Klaus Müllen

DOI

10.1021/nn5057063

eISSN

1936-086X

ISSN

1936-0851

Ausgabe der Veröffentlichung

2

Zeitschrift

ACS Nano

Sprache

en

Online publication date

2015

Paginierung

1360 - 1366

Datum der Veröffentlichung

2015

Status

Published

Herausgeber

American Chemical Society (ACS)

Herausgeber URL

http://dx.doi.org/10.1021/nn5057063

Datum der Datenerfassung

2023

Titel

Magnetoresistance and Charge Transport in Graphene Governed by Nitrogen Dopants

Ausgabe der Zeitschrift

9

Data source: Crossref

Abstract

We identify the influence of nitrogen-doping on charge- and magnetotransport of single layer graphene by comparing doped and undoped samples. Both sample types are grown by chemical vapor deposition (CVD) and transferred in an identical process onto Si/SiO2 wafers. We characterize the samples by Raman spectroscopy as well as by variable temperature magnetotransport measurements. Over the entire temperature range, the charge transport properties of all undoped samples are in line with literature values. The nitrogen doping instead leads to a 6-fold increase in the charge carrier concentration up to 4 × 10(13) cm(-2) at room temperature, indicating highly effective doping. Additionally it results in the opening of a charge transport gap as revealed by the temperature dependence of the resistance. The magnetotransport exhibits a conspicuous sign change from positive Lorentz magnetoresistance (MR) in undoped to large negative MR that we can attribute to the doping induced disorder. At low magnetic fields, we use quantum transport signals to quantify the transport properties. Analyses based on weak localization models allow us to determine an orders of magnitude decrease in the phase coherence and scattering times for doped samples, since the dopants act as effective scattering centers.

Addresses

Institut für Physik, Johannes Gutenberg-Univsersity , 55128 Mainz, Germany.

Autoren

Markus Rein
Nils Richter
Khaled Parvez
Xinliang Feng
Hermann Sachdev
Mathias Kläui
Klaus Müllen

DOI

10.1021/nn5057063

eISSN

1936-086X

Externe Identifier

PubMed Identifier: 25548883

Funding acknowledgements

European Research Council: ERC-2007-StG 208162
Deutsche Forschungsgemeinschaft: 1459
European Commission: FP7-ICT-2013-10

Open access

false

ISSN

1936-0851

Ausgabe der Veröffentlichung

2

Zeitschrift

ACS nano

Sprache

eng

Medium

Print-Electronic

Online publication date

2015

Paginierung

1360 - 1366

Datum der Veröffentlichung

2015

Status

Published

Datum der Datenerfassung

2014

Titel

Magnetoresistance and charge transport in graphene governed by nitrogen dopants.

Sub types

Research Support, Non-U.S. Gov't
Journal Article

Ausgabe der Zeitschrift

9

Data source: Europe PubMed Central

Abstract

We identify the influence of nitrogen-doping on charge- and magnetotransport of single layer graphene by comparing doped and undoped samples. Both sample types are grown by chemical vapor deposition (CVD) and transferred in an identical process onto Si/SiO2 wafers. We characterize the samples by Raman spectroscopy as well as by variable temperature magnetotransport measurements. Over the entire temperature range, the charge transport properties of all undoped samples are in line with literature values. The nitrogen doping instead leads to a 6-fold increase in the charge carrier concentration up to 4 × 10(13) cm(-2) at room temperature, indicating highly effective doping. Additionally it results in the opening of a charge transport gap as revealed by the temperature dependence of the resistance. The magnetotransport exhibits a conspicuous sign change from positive Lorentz magnetoresistance (MR) in undoped to large negative MR that we can attribute to the doping induced disorder. At low magnetic fields, we use quantum transport signals to quantify the transport properties. Analyses based on weak localization models allow us to determine an orders of magnitude decrease in the phase coherence and scattering times for doped samples, since the dopants act as effective scattering centers.

Autoren

Markus Rein
Nils Richter
Khaled Parvez
Xinliang Feng
Hermann Sachdev
Mathias Kläui
Klaus Müllen

Autoren-URL

https://www.ncbi.nlm.nih.gov/pubmed/25548883

DOI

10.1021/nn5057063

eISSN

1936-086X

Ausgabe der Veröffentlichung

2

Zeitschrift

ACS Nano

Schlüsselwörter

CVD graphene
negative magnetoresistance
nitrogen doping
weak localization

Sprache

eng

Country

United States

Paginierung

1360 - 1366

Datum der Veröffentlichung

2015

Status

Published

Datum, an dem der Datensatz öffentlich gemacht wurde

2015

Titel

Magnetoresistance and charge transport in graphene governed by nitrogen dopants.

Sub types

Journal Article
Research Support, Non-U.S. Gov't

Ausgabe der Zeitschrift

9

Data source: PubMed

Magnetoresistance and charge transport in graphene governed by nitrogen dopants

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