Structural and electrical characterization of SrBi2Nb2O9 thin films deposited on YBa2Cu3O7-δ and Nb doped SrTiO3
- Publication type:
- Journal article
- Metadata:
-
- Autoren
- C Schwan
- P Haibach
- G Jakob
- JC Martínez
- H Adrian
- Autoren-URL
- https://www.webofscience.com/api/gateway?GWVersion=2&SrcApp=fis-test-1&SrcAuth=WosAPI&KeyUT=WOS:000081171800041&DestLinkType=FullRecord&DestApp=WOS_CPL
- DOI
- 10.1063/1.370832
- Externe Identifier
- Clarivate Analytics Document Solution ID: 211QL
- ISSN
- 0021-8979
- Ausgabe der Veröffentlichung
- 2
- Zeitschrift
- JOURNAL OF APPLIED PHYSICS
- Paginierung
- 960 - 964
- Datum der Veröffentlichung
- 1999
- Status
- Published
- Titel
- Structural and electrical characterization of SrBi<sub>2</sub>Nb<sub>2</sub>O<sub>9</sub> thin films deposited on YBa<sub>2</sub>Cu<sub>3</sub>O<sub>7-δ</sub> and Nb doped SrTiO<sub>3</sub>
- Sub types
- Article
- Ausgabe der Zeitschrift
- 86
Data source: Web of Science (Lite)
- Other metadata sources:
-
- Abstract
- <jats:p>We have investigated the crystal structure and the ferroelectric properties of SrBi2Nb2O9 (SBN) thin films with YBa2Cu3O7−δ (YBCO) as the bottom and Au as the top electrode. Epitaxial heterostructures of YBCO and SBN were prepared by dc and rf sputtering, respectively, on SrTiO3 substrates. In a second layout we used a semiconducting Nb doped (0.05 wt % Nb) SrTiO3 (N-STO) substrate as the bottom electrode. The crystal structure of the films was characterized by x-ray diffraction. Since the SBN films exhibit a perfect c-axis oriented growth without the (115) phase the hysteresis loop measurements do not indicate ferroelectric behavior of the SBN films. The diode with a N-STO bottom electrode reveals, for a positive and negative applied voltage, a depletion and accumulation of the carrier density, respectively. The time dependent polarization and depolarization current can be described by a power law (Curie-von Schweidler). The conductivity as a function of applied voltage can be explained by the Schottky effect.</jats:p>
- Autoren
- Ch Schwan
- P Haibach
- G Jakob
- JC Martı́nez
- H Adrian
- DOI
- 10.1063/1.370832
- eISSN
- 1089-7550
- ISSN
- 0021-8979
- Ausgabe der Veröffentlichung
- 2
- Zeitschrift
- Journal of Applied Physics
- Sprache
- en
- Paginierung
- 960 - 964
- Datum der Veröffentlichung
- 1999
- Status
- Published
- Herausgeber
- AIP Publishing
- Herausgeber URL
- http://dx.doi.org/10.1063/1.370832
- Datum der Datenerfassung
- 2024
- Titel
- Structural and electrical characterization of SrBi2Nb2O9 thin films deposited on YBa2Cu3O7−δ and Nb doped SrTiO3
- Ausgabe der Zeitschrift
- 86
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