651. Current-driven writing process in antiferromagnetic Mn2Au for memory applications Autoren: Reimers, S; Lytvynenko, Y; Niu, YR; Golias, E; Sarpi, B; Veiga, LSI; Denneulin, T; Kovacs, A; Dunin-Borkowski, RE; Blaesser, J; Klaeui, M; Jourdan, M Veröffentlichungsdatum: 2023 Type: Journal article