Nonequilibrium spin Hall accumulation in ballistic semiconductor nanostructures
- Publikationstyp:
- Zeitschriftenaufsatz
- Metadaten:
-
- Autoren
- Branislav K Nikolić
- Satofumi Souma
- Liviu P Zârbo
- Jairo Sinova
- Sammlungen
- metadata
- ISSN
- 0031-9007
- Ausgabe der Veröffentlichung
- 4
- Zeitschrift
- Physical review letters
- Schlüsselwörter
- 530 Physik
- 530 Physics
- Sprache
- eng
- Paginierung
- Art. 046601
- Datum der Veröffentlichung
- 2005
- Herausgeber
- APS
- Herausgeber URL
- http://dx.doi.org/10.1103/PhysRevLett.95.046601
- Datum der Datenerfassung
- 2020
- Datum, an dem der Datensatz öffentlich gemacht wurde
- 2020
- Zugang
- Public
- Titel
- Nonequilibrium spin Hall accumulation in ballistic semiconductor nanostructures
- Ausgabe der Zeitschrift
- 95
Datenquelle: METADATA.UB
- Andere Metadatenquellen:
-
- Autoren
- BK Nikolic
- S Souma
- LP Zârbo
- J Sinova
- Autoren-URL
- https://www.webofscience.com/api/gateway?GWVersion=2&SrcApp=fis-test-1&SrcAuth=WosAPI&KeyUT=WOS:000230680000049&DestLinkType=FullRecord&DestApp=WOS_CPL
- DOI
- 10.1103/PhysRevLett.95.046601
- Externe Identifier
- Clarivate Analytics Document Solution ID: 947XG
- PubMed Identifier: 16090829
- ISSN
- 0031-9007
- Ausgabe der Veröffentlichung
- 4
- Zeitschrift
- PHYSICAL REVIEW LETTERS
- Artikelnummer
- ARTN 046601
- Datum der Veröffentlichung
- 2005
- Status
- Published
- Titel
- Nonequilibrium spin hall accumulation in ballistic semiconductor nanostructures -: art. no. 046601
- Sub types
- Article
- Ausgabe der Zeitschrift
- 95
Datenquelle: Web of Science (Lite)
- Autoren
- Branislav K Nikolić
- Satofumi Souma
- Liviu P Zârbo
- Jairo Sinova
- DOI
- 10.1103/physrevlett.95.046601
- eISSN
- 1079-7114
- ISSN
- 0031-9007
- Ausgabe der Veröffentlichung
- 4
- Zeitschrift
- Physical Review Letters
- Sprache
- en
- Artikelnummer
- 046601
- Online publication date
- 2005
- Status
- Published online
- Herausgeber
- American Physical Society (APS)
- Herausgeber URL
- http://dx.doi.org/10.1103/physrevlett.95.046601
- Datum der Datenerfassung
- 2017
- Titel
- Nonequilibrium Spin Hall Accumulation in Ballistic Semiconductor Nanostructures
- Ausgabe der Zeitschrift
- 95
Datenquelle: Crossref
- Abstract
- We demonstrate that the flow of a longitudinal unpolarized current through a ballistic two-dimensional electron gas with Rashba spin-orbit coupling will induce a nonequilibrium spin accumulation which has opposite signs for the two lateral edges and is, therefore, the principal observable signature of the spin Hall effect in two-probe semiconductor nanostructures. The magnitude of its out-of-plane component is gradually diminished by static disorder, while it can be enhanced by an in-plane transverse magnetic field. Moreover, our prediction of the longitudinal component of the spin Hall accumulation, which is insensitive to the reversal of the bias voltage, offers direct evidence to differentiate experimentally between the extrinsic, intrinsic, and mesoscopic spin Hall mechanisms.
- Addresses
- Department of Physics and Astronomy, University of Delaware, Newark, 19716-2570, USA.
- Autoren
- Branislav K Nikolić
- Satofumi Souma
- Liviu P Zârbo
- Jairo Sinova
- DOI
- 10.1103/physrevlett.95.046601
- eISSN
- 1079-7114
- Externe Identifier
- PubMed Identifier: 16090829
- Open access
- false
- ISSN
- 0031-9007
- Ausgabe der Veröffentlichung
- 4
- Zeitschrift
- Physical review letters
- Sprache
- eng
- Medium
- Print-Electronic
- Online publication date
- 2005
- Paginierung
- 046601
- Datum der Veröffentlichung
- 2005
- Status
- Published
- Datum der Datenerfassung
- 2005
- Titel
- Nonequilibrium spin Hall accumulation in ballistic semiconductor nanostructures.
- Sub types
- Journal Article
- Ausgabe der Zeitschrift
- 95
Datenquelle: Europe PubMed Central
- Abstract
- We demonstrate that the flow of a longitudinal unpolarized current through a ballistic two-dimensional electron gas with Rashba spin-orbit coupling will induce a nonequilibrium spin accumulation which has opposite signs for the two lateral edges and is, therefore, the principal observable signature of the spin Hall effect in two-probe semiconductor nanostructures. The magnitude of its out-of-plane component is gradually diminished by static disorder, while it can be enhanced by an in-plane transverse magnetic field. Moreover, our prediction of the longitudinal component of the spin Hall accumulation, which is insensitive to the reversal of the bias voltage, offers direct evidence to differentiate experimentally between the extrinsic, intrinsic, and mesoscopic spin Hall mechanisms.
- Autoren
- Branislav K Nikolić
- Satofumi Souma
- Liviu P Zârbo
- Jairo Sinova
- Autoren-URL
- https://www.ncbi.nlm.nih.gov/pubmed/16090829
- DOI
- 10.1103/PhysRevLett.95.046601
- ISSN
- 0031-9007
- Ausgabe der Veröffentlichung
- 4
- Zeitschrift
- Phys Rev Lett
- Sprache
- eng
- Country
- United States
- Paginierung
- 046601
- Datum der Veröffentlichung
- 2005
- Status
- Published
- Datum, an dem der Datensatz öffentlich gemacht wurde
- 2005
- Titel
- Nonequilibrium spin Hall accumulation in ballistic semiconductor nanostructures.
- Sub types
- Journal Article
- Ausgabe der Zeitschrift
- 95
Datenquelle: PubMed
- Beziehungen:
- Eigentum von