Irradiation study of a fully monolithic HV-CMOS pixel sensor design in AMS 180 nm

Publikationstyp:
Zeitschriftenaufsatz
Metadaten:
Autoren
  • H Augustin
  • N Berger
  • S Dittmeier
  • J Hammerich
  • A Herkert
  • L Huth
  • D Immig
  • J Kröger
  • F Meier
  • I Perić
  • A-K Perrevoort
  • A Schöning
  • D vom Bruch
  • D Wiedner
DOI
10.1016/j.nima.2018.07.044
ISSN
0168-9002
Zeitschrift
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
Sprache
en
Paginierung
53 - 60
Datum der Veröffentlichung
2018
Status
Published
Herausgeber
Elsevier BV
Herausgeber URL
http://dx.doi.org/10.1016/j.nima.2018.07.044
Datum der Datenerfassung
2020
Titel
Irradiation study of a fully monolithic HV-CMOS pixel sensor design in AMS 180 nm
Ausgabe der Zeitschrift
905

Datenquelle: Crossref

Andere Metadatenquellen:
Abstract
High-Voltage Monolithic Active Pixel Sensors (HV-MAPS) based on the 180 nm HV-CMOS process have been proposed to realize thin, fast and highly integrated pixel sensors. The MuPix7 prototype, fabricated in the commercial AMS H18 process, features a fully integrated on-chip readout, i.e. hit-digitization, zero suppression and data serialization. It is the first fully monolithic HV-CMOS pixel sensor that has been tested for the use in high irradiation environments like HL-LHC. We present results from laboratory and test beam measurements of MuPix7 prototypes irradiated with neutrons (up to $5.0\cdot10^{15}{\,\rm{n}_{\rm{eq}}/cm^2}$) and protons (up to $7.8\cdot 10^{15} \,\rm{protons}/cm^2$) and compare the performance with non-irradiated sensors. Efficiencies well above 90 % at noise rates below 200 Hz per pixel are measured. A time resolution better than 22 ns is measured for all tested settings and sensors, even at the highest irradiation fluences. The data transmission at 1.25 Gbit/s and the on-chip PLL remain fully functional.
Autoren
  • H Augustin
  • N Berger
  • S Dittmeier
  • J Hammerich
  • A Herkert
  • L Huth
  • D Immig
  • J Kröger
  • F Meier
  • I Perić
  • A-K Perrevoort
  • A Schöning
  • D vom Bruch
  • D Wiedner
Autoren-URL
http://arxiv.org/abs/1712.03921v2
Schlüsselwörter
  • physics.ins-det
  • physics.ins-det
Datum der Veröffentlichung
2017
Herausgeber URL
http://dx.doi.org/10.1016/j.nima.2018.07.044
Datum der Datenerfassung
2017
Datum, an dem der Datensatz öffentlich gemacht wurde
2017
Titel
Irradiation study of a fully monolithic HV-CMOS pixel sensor design in AMS 180 nm

Files

1712.03921v2.pdf

Datenquelle: arXiv

Autoren
  • H Augustin
  • N Berger
  • S Dittmeier
  • J Hammerich
  • A Herkert
  • L Huth
  • D Immig
  • J Kröger
  • F Meier
  • I Perić
  • A-K Perrevoort
  • A Schöning
  • D vom Bruch
  • D Wiedner
DOI
10.1016/j.nima.2018.07.044
ISSN
0168-9002
Zeitschrift
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
Sprache
en
Paginierung
53 - 60
Datum der Veröffentlichung
2018
Status
Published
Herausgeber
Elsevier BV
Datum der Datenerfassung
2020
Titel
Irradiation study of a fully monolithic HV-CMOS pixel sensor design in AMS 180 nm
Ausgabe der Zeitschrift
905

Datenquelle: Manual

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