Active sites of Te-hyperdoped silicon by hard x-ray photoelectron spectroscopy
- Publikationstyp:
- Zeitschriftenaufsatz
- Metadaten:
-
- Autoren
- Moritz Hoesch
- Olena Fedchenko
- Mao Wang
- Christoph Schlueter
- Dmitrii Potorochin
- Katerina Medjanik
- Sergey Babenkov
- Anca S Ciobanu
- Aimo Winkelmann
- Hans-Joachim Elmers
- Shengqiang Zhou
- Manfred Helm
- Gerd Schoenhense
- Autoren-URL
- https://www.webofscience.com/api/gateway?GWVersion=2&SrcApp=fis-test-1&SrcAuth=WosAPI&KeyUT=WOS:001018500000005&DestLinkType=FullRecord&DestApp=WOS_CPL
- DOI
- 10.1063/5.0148430
- eISSN
- 1077-3118
- Externe Identifier
- Clarivate Analytics Document Solution ID: K7WG5
- ISSN
- 0003-6951
- Ausgabe der Veröffentlichung
- 25
- Zeitschrift
- APPLIED PHYSICS LETTERS
- Artikelnummer
- ARTN 252108
- Datum der Veröffentlichung
- 2023
- Status
- Published
- Titel
- Active sites of Te-hyperdoped silicon by hard x-ray photoelectron spectroscopy
- Sub types
- Article
- Ausgabe der Zeitschrift
- 122
Datenquelle: Web of Science (Lite)
- Andere Metadatenquellen:
-
- Abstract
- <jats:p>Multiple dopant configurations of Te impurities in close vicinity in silicon are investigated using photoelectron spectroscopy, photoelectron diffraction, and Bloch wave calculations. The samples are prepared by ion implantation followed by pulsed laser annealing. The dopant concentration is variable and high above the solubility limit of Te in silicon. The configurations in question are distinguished from isolated Te impurities by a strong chemical core level shift. While Te clusters are found to form only in very small concentrations, multi-Te configurations of type dimer or up to four Te ions surrounding a vacancy are clearly identified. For these configurations, a substitutional site location of Te is found to match the data best in all cases. For isolated Te ions, this matches the expectations. For multi-Te configurations, the results contribute to understanding the exceptional activation of free charge carriers in hyperdoping of chalcogens in silicon.</jats:p>
- Autoren
- Moritz Hoesch
- Olena Fedchenko
- Mao Wang
- Christoph Schlueter
- Dmitrii Potorochin
- Katerina Medjanik
- Sergey Babenkov
- Anca S Ciobanu
- Aimo Winkelmann
- Hans-Joachim Elmers
- Shengqiang Zhou
- Manfred Helm
- Gerd Schönhense
- DOI
- 10.1063/5.0148430
- eISSN
- 1077-3118
- ISSN
- 0003-6951
- Ausgabe der Veröffentlichung
- 25
- Zeitschrift
- Applied Physics Letters
- Sprache
- en
- Online publication date
- 2023
- Datum der Veröffentlichung
- 2023
- Status
- Published
- Herausgeber
- AIP Publishing
- Herausgeber URL
- http://dx.doi.org/10.1063/5.0148430
- Datum der Datenerfassung
- 2023
- Titel
- Active sites of Te-hyperdoped silicon by hard x-ray photoelectron spectroscopy
- Ausgabe der Zeitschrift
- 122
Datenquelle: Crossref
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