Electron transport and the effect of current annealing in a two-point contacted hBN/graphene/hBN heterostructure device
- Publikationstyp:
- Zeitschriftenaufsatz
- Metadaten:
-
- Autoren
- Leo Schnitzspan
- Alexander Tries
- Mathias Klaeui
- Autoren-URL
- https://www.webofscience.com/api/gateway?GWVersion=2&SrcApp=fis-test-1&SrcAuth=WosAPI&KeyUT=WOS:000576393200001&DestLinkType=FullRecord&DestApp=WOS_CPL
- DOI
- 10.1063/5.0016471
- eISSN
- 1089-7550
- Externe Identifier
- Clarivate Analytics Document Solution ID: NY4XA
- ISSN
- 0021-8979
- Ausgabe der Veröffentlichung
- 12
- Zeitschrift
- JOURNAL OF APPLIED PHYSICS
- Artikelnummer
- ARTN 124302
- Datum der Veröffentlichung
- 2020
- Status
- Published
- Titel
- Electron transport and the effect of current annealing in a two-point contacted hBN/graphene/hBN heterostructure device
- Sub types
- Article
- Ausgabe der Zeitschrift
- 128
Datenquelle: Web of Science (Lite)
- Andere Metadatenquellen:
-
- Abstract
- <jats:p>In this work, we fabricated a 2D van der Waals heterostructure device in an inert nitrogen atmosphere by means of a dry transfer technique in order to obtain a clean and largely impurity free stack of hexagonal boron nitride (hBN)-encapsulated few-layer graphene. The heterostructure was contacted from the top with gold leads on two sides, and the device’s properties including intrinsic charge carrier density, mobility, and contact resistance were studied as a function of temperature from 4 K to 270 K. We show that the contact resistance of the device mainly originates from the metal/graphene interface, which contributes a significant part to the total resistance. We demonstrate that current annealing affects the graphene/metal interface significantly, whereas the intrinsic carrier density and carrier mobility of the hBN-encapsulated few-layer graphene are almost unaffected, contrary to often reported mobility improvements. However, after current annealing, a 75% reduction in the contact resistance improves the overall performance of such a heterostructure device and the backgate-dependent transfer curve becomes more symmetric with respect to the Dirac point. A maximum carrier mobility of 11200cm2V−1s−1 for this hBN/graphene/hBN heterostructure was measured at 4 K, showing good device performance, in particular, after current annealing.</jats:p>
- Autoren
- Leo Schnitzspan
- Alexander Tries
- Mathias Kläui
- DOI
- 10.1063/5.0016471
- eISSN
- 1089-7550
- ISSN
- 0021-8979
- Ausgabe der Veröffentlichung
- 12
- Zeitschrift
- Journal of Applied Physics
- Sprache
- en
- Online publication date
- 2020
- Datum der Veröffentlichung
- 2020
- Status
- Published
- Herausgeber
- AIP Publishing
- Herausgeber URL
- http://dx.doi.org/10.1063/5.0016471
- Datum der Datenerfassung
- 2023
- Titel
- Electron transport and the effect of current annealing in a two-point contacted hBN/graphene/hBN heterostructure device
- Ausgabe der Zeitschrift
- 128
Datenquelle: Crossref
- Author's licence
- InCopyright
- Autoren
- Leo Schnitzspan
- Alexander Tries
- Mathias Kläui
- Hosting institution
- Universitätsbibliothek Mainz
- Sammlungen
- JGU-Publikationen
- Resource version
- Accepted version
- DOI
- 10.1063/5.0016471
- File(s) embargoed
- false
- Open access
- true
- ISSN
- 0021-8979
- Ausgabe der Veröffentlichung
- 12
- Zeitschrift
- Journal of applied physics
- Schlüsselwörter
- 530 Physik
- 530 Physics
- Sprache
- eng
- Open access status
- Open Access
- Paginierung
- 124302
- Datum der Veröffentlichung
- 2020
- Public URL
- https://openscience.ub.uni-mainz.de/handle/20.500.12030/5649
- Herausgeber
- American Inst. of Physics
- Herausgeber URL
- https://doi.org/10.1063/5.0016471
- Datum der Datenerfassung
- 2021
- Datum, an dem der Datensatz öffentlich gemacht wurde
- 2021
- Zugang
- Public
- Titel
- Electron transport and the effect of current annealing in a two-point contacted hBN/graphene/hBN heterostructure device
- Ausgabe der Zeitschrift
- 128
Files
schnitzspan_leo-electron_trans-20210209162216463.pdf
Datenquelle: OPENSCIENCE.UB
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